Semiconductor device and method of manufacturing same

ABSTRACT

A lead frame has an array of mounting portions connected by joint bars, and each of the mounting portions has an island serving as an external connection terminal and a plurality of lead terminals extending from the island and serving as external connection terminals for a semiconductor chip to be mounted on an adjacent island along the array. An electrically conductive paste is applied to the island, and a semiconductor chip is mounted on the island. Then, the semiconductor chip is electrically connected to the lead terminals by wires. A resin layer is deposited over the semiconductor chip, a principal surface of the island, and principle surfaces the lead terminals, while leaving opposite surfaces of the island and the lead terminals exposed. A region surrounding the island and the lead terminals electrically connected to the island is cut off into a package.

This application is a Divisional Application of Ser. No. 09/036,783 nowabandoned.

BACKGROUND OF THE INVENTION

1. Field of the Invention

The present invention relates to a semiconductor device and a method ofmanufacturing such a semiconductor device, and more particularly to asemiconductor device having an increased effective mount area percentagewhich represents a ratio between the chip area of the semiconductordevice and the area in which the semiconductor device is mounted on apackaging board such as a printed-circuit board or the like, and amethod of manufacturing such a semiconductor device.

2. Description of the Prior Art

Generally, a semiconductor device comprising a transistor elementfabricated on a silicon substrate is mainly of a structure as shown inFIG. 1A of the accompanying drawings.

As shown in FIG. 1A, a semiconductor device comprises a siliconsubstrate 1, an island 2 such as a heat-radiating plate or the like onwhich the silicon substrate 1 is mounted, lead terminals 3, and a moldedresin body 4 by which the silicon substrate 1, the island 2, and thelead terminals 3 are encased.

The silicon substrate 1 is fixed to the island 2, which is made of acopper-based material, by a joining material 5 such as a solderingmaterial. A semiconductor element formed on the silicon substrate 1 hasbase and emitter electrodes electrically connected to the lead terminals3 by wires 6 according to a wire bonding process. The semiconductorelement has a collector electrode electrically connected to a leadterminal that is integral with the island 2. After the silicon substrate1 is mounted on the island 2 and the semiconductor element iselectrically connected to the lead terminals, the assembly is encased bythe molded resin body 4, which is made of a thermosetting resin such asan epoxy resin or the like, according to a transfer molding process,thereby producing a three-terminal semiconductor device in which thesilicon substrate 1 and portions of the lead terminals 3 are fullycovered with the molded resin body 4.

As shown in FIG. 1B of the accompanying drawings, the transfer moldingprocess is carried out by a molding assembly including upper and lowermolds 7, 8 which jointly define a mold cavity 9. A lead frame 10 onwhich the silicon substrate 1 and the wires 6 are mounted by die bondingand wire bonding is placed in the mold cavity 9, and then thethermosetting resin is introduced into the mold cavity 9.

The molded semiconductor device is usually mounted on a packaging boardsuch as a glass epoxy board or the like, and electrically connected toother semiconductor devices and circuit elements on the packaging board.The semiconductor device thus connected will operate as a component inan electronic circuit.

FIG. 2 of the accompanying drawings shows a semiconductor device mountedon a packaging board. As shown in FIG. 2, a semiconductor device 20 ismounted on a packaging board 30 and has base and emitter electrodesconnected to lead terminals 21, 23 and a collector terminal connected toa lead terminal 22.

The semiconductor device 20 is mounted on the packaging board 30 in amount area thereon which is defined as a region surrounded by the leadterminals 21, 22, 23 and electrically conductive pads connected to thelead terminals 21, 22, 23. The mount area is much larger than the areaof the silicon substrate (semiconductor chip) in the semiconductordevice 20. Most of the mount area is taken up by the molded resin bodyof the semiconductor device 20 and the lead terminals 21, 22, 23.

A ratio between the area of the semiconductor chip which performsfunctions of the semiconductor device 20 and the mount area is referredto as an effective area percentage. It has been confirmed that theeffective area percentage of resin-molded semiconductor devices is verysmall. The small effective area percentage means that most of the mountarea is a dead space not directly related to the semiconductor chip, andalso means that there is a large dead space on the packaging board 30 onwhich the semiconductor device 20 is connected to the othersemiconductor devices and circuit elements. The large dead space poseslimitations on efforts to achieve a higher density on the packagingboard 30 and make the packaging board 30 smaller in size.

Such problems manifest themselves particularly with semiconductordevices having small package sizes. For example, a semiconductor chipinstalled in the contour type SC-75A according to the EIAJ standards hasa maximum size of 0.40 mm×0.40 mm as shown in FIG. 3 of the accompanyingdrawings. When the semiconductor chip is connected to metal leadterminals by wires and encased by a molded body, the overall size of theresultant semiconductor device has a size of 1.6 mm×1.6 mm. The chiparea of the semiconductor device is 0.16 mm², and the mount area inwhich the semiconductor device is mounted is 2.56 mm², assuming that itis substantially the same as the area of the semiconductor device.Consequently, the effective area percentage of the semiconductor deviceis about 6.25%. Therefore, most of the mount area is a dead space notdirectly related to the area of the semiconductor chip.

The above problems with respect to the effective area percentage areserious if the semiconductor device has a small package size, asdescribed above, and a large chip size. The same problems also occurwith respect to resin-molded semiconductor devices in whichsemiconductor chips are connected to metal lead terminals and encased bymolded resin bodies.

Recent electronic devices including portable information processingdevices such as personal computers, electronic notepads, etc., 8-mmvideo cameras, portable telephone sets, cameras, liquid-crystaltelevision sets, etc. have packaging boards which tend to be higher indensity and smaller in size as the electronic devices themselves becomesmaller in size.

As described above, the large dead space contained in the mount area forresin-molded semiconductor devices has posed limitations on the effortsto reduce the size of packaging boards, and hence has preventedpackaging boards from being reduced in size.

One conventional proposal for increasing the effective area percentageis disclosed in Japanese laid-open patent publication No. 3-248551. Thedisclosed arrangement will be described below with reference to FIG. 4of the accompanying drawings. According to the disclosure, in order tominimize the mount area in which a resin-molded semiconductor device ismounted on a packaging board or the like, lead terminals 41, 42, 43 towhich base, emitter, and collector terminals of a semiconductor chip 40are connected do not project outwardly from sides of a molded resin body44, but are bent along the sides of the molded resin body 44.

Inasmuch as the distal ends of the lead terminals 41, 42, 43 do notproject outwardly, the mount area of the resin-molded semiconductordevice is reduced by an area which would otherwise be taken up by theprojecting ends of the lead terminals 41, 42, 43, resulting in a slightincrease in the effective area percentage.

The distal ends of the lead terminals 41, 42, 43 are bent around cornersof the lower surface of the molded resin body 44. Because the leadterminals 41, 42, 43 are required to withstand stresses imposed whenthey are bent, the lead terminals 41, 42, 43 need to have a sufficientlylarge length embedded in the molded resin body 44. As a consequence, thesize of the molded resin body 44 is much larger than the size of thesemiconductor chip 40, and hence the effective area percentage may notsubstantially be reduced. The lead terminals 41, 42, 43 required to beconnected to the semiconductor chip 40 increase the cost of materialsused and complicate the fabrication process, with the result themanufacturing cost cannot be lowered.

To maximize the effective area percentage, a semiconductor chip maydirectly be mounted on a packaging board for equalizing the area of thesemiconductor chip and the mount area substantially to each other.

Japanese laid-open patent publication No. 6-338504 discloses aconventional process of mounting a semiconductor chip directly on aboard such as a packaging board. According to the disclosed process, asshown in FIG. 5 of the accompanying drawings, a flip chip comprising aplurality of bump electrodes 46 formed on a semiconductor chip 45 isbonded to a packaging board 47 by a face-down bonding process. Thedisclosed process is used primarily with respect to horizontalsemiconductor devices such as MOSFETs or the like in which gate (base),source (emitter), and drain (collector) electrodes are formed on oneprincipal surface of a silicon substrate, with current or voltage pathsextending horizontally.

The flip-chip mounting, however, cannot be applied to verticalsemiconductor devices such as transistor devices or the like in which asilicon substrate serves as an electrode and electrodes are formed ondifferent surfaces, with current paths extending vertically.

Another conventional process of mounting a semiconductor chip directlyon a board such as a packaging board is revealed in Japanese laid-openpatent publication No. 7-38334, for example. According to the revealedprocess, as shown in FIG. 6 of the accompanying drawings, asemiconductor chip 53 is mounted on an electrically conductive pattern52 on a packaging board 51 by a die bonding process, and theelectrically conductive pattern 52 around the semiconductor chip 53 iselectrically connected to the semiconductor chip 53 by wires 54. Thedisclosed process can be applied to semiconductor chips such as verticaltransistors in which a silicon substrate serves as an electrode.

The wires 54 which connect the semiconductor chip 53 to the electricallyconductive pattern 52 disposed therearound are usually in the form ofthin gold wires. In order to increase the peel strength (tensilestrength) of bonding areas which are bonded to the thin gold wires, thewires 54 should preferably be bonded in a heating atmosphere in therange of about 200° C. to 300° C. When a semiconductor chip is mountedon a packaging board made of insulating resin by a die bonding process,however, if the assembly is heated to the above temperature range, thenthe packaging board will be distorted, and the soldering material withwhich other circuit elements including chip capacitors, chip resistors,etc. mounted on the packaging board will be melted. To avoid suchdifficulties, it has been customary to mount a semiconductor chip on apackaging board made of insulating resin according to a die bondingprocess at a temperature ranging from about 100° C. to 150° C. Such alow temperature range tends to reduce the peel strength of the bondingareas.

Since the die-bonded semiconductor chip is covered and protected by theencasing resin such as an epoxy resin or the like, the reduction in thepeel strength allows bonded regions to be peeled off due to shrinkage ofthe epoxy resin upon thermosetting.

The lead frame 10 and the mold cavity 9 (see FIG. 1B) can be positionedrelatively to each other with an accuracy limit of ±50 μ. Therefore, thesize of the island 2 (see FIG. 1A) should be designed in view of theabove positional accuracy limit. The positional accuracy limit reducesthe dimensions of the island 2 with respect to the outer dimensions ofthe package, resulting in limitations on the maximum dimensions of thesemiconductor chip 1 that can be accommodated in the package.

SUMMARY OF THE INVENTION

It is therefore an object of the present invention to provide asemiconductor device which has electrodes disposed in one plane forconnecting a base, an emitter, and a collector for external connection,and has a maximum effective area percentage which is a ratio between thearea of a semiconductor chip and the amount area in which thesemiconductor device is mounted on a packaging board, resulting in aminimum dead space in the mount area.

According to the present invention, there is provided a semiconductordevice comprising an island with a semiconductor chip mounted thereon, aplurality of lead terminals having ends disposed near the island, aplurality of connectors by which electrode pads on a surface of thesemiconductor chip are electrically connected to the lead terminals, andan insulating body encasing the semiconductor chip, the island, the leadterminals, and the connectors, producing a package. The island and thelead terminals are separate from each other, and the package has anouter contour defined by surfaces cut after the insulating body issolidified.

The lead terminals have ends exposed as external connection terminals atone of the surfaces.

According to the present invention, there is also provided asemiconductor device comprising an island with a semiconductor chipmounted thereon, a plurality of lead terminals disposed near the island,a plurality of connecting lines by which electrodes of the semiconductorchip are electrically connected to the lead terminals, and a moldedresin body encasing the island, the semiconductor chip, the leadterminals, and the connecting lines, producing a package. The moldedresin body has side surfaces defined as cut surfaces, and the island andthe lead terminals have surfaces exposed at a reverse side of the moldedresin body. The island and the lead terminals have cut surfaces lyingflush with the side surfaces of the molded resin body.

According to the present invention, there is further provided a methodof manufacturing a semiconductor device, comprising the steps ofpreparing a lead frame having an island and a plurality of leadterminals having ends disposed near the island, mounting a semiconductorchip on a surface of the island, electrically connecting electrodes on asurface of the semiconductor chip to the lead terminals, encasing thelead frame, the lead terminals, and the semiconductor chip with aninsulating body, and cutting the insulating body into a package.

According to the present invention, there is also provided a method ofmanufacturing a semiconductor device, comprising the steps of preparinga lead frame having an array of frames connected by joint bars, each ofthe frames having an island serving as an external connection terminaland a plurality of lead terminals extending from the island and servingas external connection terminals for a semiconductor chip to be mountedon an adjacent island along the array, mounting a semiconductor chip ona principal surface of the island, electrically connecting thesemiconductor chip to the lead terminals extending from an adjacentisland along the array, depositing a resin layer in covering relation tothe semiconductor chip, the principal surface of the island, andprincipal surfaces the lead terminals, while leaving opposite surfacesof the island and the lead terminals exposed, and separating a regionsurrounding the island and the lead terminals electrically connected tothe island into a package.

The above and other objects, features, and advantages of the presentinvention will become more apparent from the following description whentaken in conjunction with the accompanying drawings in which preferredembodiments of the present invention are shown by way of illustrativeexample.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1A is a cross-sectional view of a conventional semiconductordevice;

FIG. 1B is a cross-sectional view showing the manner in which theconventional semiconductor device is fabricated according to a transfermolding process;

FIG. 2 is a cross-sectional view of another conventional semiconductordevice mounted on a packaging board;

FIG. 3 is a plan view of still another conventional semiconductordevice;

FIG. 4 is a plan view of yet still another conventional semiconductordevice;

FIG. 5 is a cross-sectional view of another conventional semiconductordevice mounted on a packaging board;

FIG. 6 is a cross-sectional view of still another conventionalsemiconductor device mounted on a packaging board;

FIG. 7A is a cross-sectional view of a semiconductor device according tothe present invention;

FIG. 7B is a plan view of the semiconductor device shown in FIG. 7A;

FIG. 7C is a side elevational view of the semiconductor device shown inFIG. 7A;

FIG. 8A is a bottom view of the semiconductor device shown in FIG. 7A;

FIG. 8B is a schematic perspective view of the semiconductor deviceshown in FIG. 7A;

FIG. 9A is a fragmentary plan view of a lead frame used in a process ofmanufacturing the semiconductor device according to the presentinvention;

FIG. 9B is a cross-sectional view taken along line IXB—IXB of FIG. 9A;

FIG. 10A is a fragmentary plan view of the lead frame on whichsemiconductor chips are mounted and connected by wires;

FIG. 10B is a cross-sectional view taken along line XB—XB of FIG. 10A;

FIG. 11A is a fragmentary cross-sectional view of the lead frame and thesemiconductor chips which are encased by a molded resin body;

FIG. 11B is a perspective view of a molded assembly;

FIG. 12A is a fragmentary plan view of the molded assembly which isslitted;

FIG. 12B is a cross-sectional view taken along line XIIB—XIIB of FIG.12A;

FIG. 13A is a fragmentary cross-sectional view of the molded assemblyfrom which a bottom plate is removed;

FIG. 13B is a fragmentary cross-sectional view of the molded assembly onwhich plated layers are formed;

FIG. 14 is a fragmentary cross-sectional view of the molded assemblywhich is to be severed; and

FIG. 15 is a fragmentary plan view of a lead frame used in a process ofmanufacturing a semiconductor device according to another embodiment ofthe present invention.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

As shown in FIGS. 7A-7C and 8A, 8B, a semiconductor device according tothe present invention comprises a silicon semiconductor chip 72including a desired active element and bonded to a principal surface ofan island 61 by an electrically conductive adhesive or a eutecticcrystal of Au—Si. The island 61 is used as a portion 100 of an electrodefor external connection. The semiconductor device also has a pluralityof lead terminals 62, 63 spaced from the island 61. Electrode pads on anupper surface of the semiconductor chip 72 are electrically connected tosurfaces of the lead terminals 62, 63 by wires 73. The semiconductorchip 72, the wires 73, the island 61, and the lead terminals 62, 63 areencased by a molded resin body 81, providing a package which issubstantially in the form of a rectangular parallelepiped. The moldedresin body 81 is made of molded thermosetting epoxy resin.

Each of the island 61 and the lead terminals 62, 63 is made of acopper-based metal material having a thickness of about 0.2 mm. Themolded resin body 81 has outer dimensions including a width of about 0.7mm, a length of about 1.0 mm, and a height of about 0.6 mm. The island61 and the lead terminals 62, 63 have reverse or lower sides exposed onthe reverse or lower surface of the molded resin body 81. The exposedreverse or lower sides of the island 61 and the lead terminals 62, 63are plated with metal layers 82 such as solder-plating layers. Theisland 61 and the lead terminals 62, 63 serve respectively as externalconnection terminals 100, 101, 102.

Of the six surfaces of the package in the form of a rectangularparallelepiped, at least an upper surface 81 a is formed by a mold whichis used to mold the molded resin body 81. Side surfaces 81 c, 81 d, 81e, 81 f of the package are formed by a cutter which is used to cut offthe molded resin body 81. The lead terminals 62, 63 have ends exposed atthe side surface 81 e. The island 61 has a plurality of projecting teeth61 a, 61 b whose ends are exposed at the side surfaces 81 c, 81 d, 81 f.The portions of the island 61 and the lead terminals 62, 63 which areexposed at a reverse or lower surface 81 b of the package and the sidesurfaces 81 c, 81 e are soldered as the external connection terminals100, 101, 102 to a printed-circuit board. The semiconductor device isthus mounted on the printed-circuit board.

A process of manufacturing the semiconductor device will be describedbelow with reference to FIGS. 9A through 14.

1st Step (FIGS. 9A and 9B):

A lead frame 60 shown in FIGS. 9A and 9B is prepared. The lead frame 60comprises a plurality of mounting portions 64 arrayed in a row or columnand interconnected by joint bars 65 that are connected to outer strips66 between which mounting portions 64 are positioned. Each of themounting portions 64 has an island 61 which serves as a mount for asemiconductor chip and a plurality of lead terminals 62, 63 which extendfrom the island 61 and which will serve as electrodes for externalconnection. In FIGS. 9A and 9B, adjacent mounting portions arerepresented respectively by 64, 64A, and the mounting portion 64A has anisland 61A and lead terminals 62A, 63A extending therefrom toward butterminating short of the island 61 of the adjacent mounting portion 64.For example, one elongate lead frame 61 comprises an array of 100mounting portions 64. Each of the lead terminals 62, 63, 62A, 63A has aconstricted central region. The lead frame 60 also has a bottom plate 67which extends below the mounting portions 64, 64A and are lower thanupper surfaces of the islands 61, 61A and the lead terminals 62, 63,62A, 63A. The bottom plate 67 has a reverse or lower surface which iscontiguous to and lies flush with the reverse or lower surfaces of theislands 61, 61A and the lead terminals 62, 63, 62A, 63A.

The lead frame 60 which as the mounting portions 64, 64A and the bottomplate 67 is manufactured as follows: A strip-shaped or elongaterectangular thin metal sheet made of a copper-based metal materialhaving a thickness of about 0.2 mm is prepared, and a hard mask or aphotoresist mask which has a pattern complementary to the mountingportions 64, 64A, the joint bars 65, 65A, and the outer strips 65 isformed on a principal surface of the thin metal sheet. Then, the exposedsurface of the thin metal sheet which is not covered with the mask isetched to a depth of about 0.15 mm, thereby selectively forming thebottom plate 67 (shown hatched in FIG. 9A) having a thickness of about0.05 mm around the islands 61, 61A, the lead terminals 62, 63, 62A, 63A,and the joint bars 65. The thickness of the lead frame 60 and thethickness of the bottom plate 67 may be set to desired values.Alternatively, the bottom plate 67 which has a uniform thickness may beprepared separately and bonded to the lead frame 60 which has beenformed with the mounting portions 64.

2nd Step (FIGS. 10A and 10B):

Then, the lead frame 60 is processed according to a die bonding processand a wire bonding process. As shown in FIGS. 10A and 10B, anelectrically conductive paste 71 such as an Ag paste or a solderingmaterial is coated on primary surfaces of the islands 61, 61A, andsemiconductor chips 72 are fixed to the islands 61, 61A by theelectrically conductive paste 71. Alternatively, the primary surfaces ofthe islands 61, 61A may be plated with gold, and the semiconductor chips72 may be joined to the islands 61, 61A by an eutectic crystal.

Bonding pads on the semiconductor chips 72 are electrically connected tothe lead terminals 62, 63 by wires 73 according to a wire bondingprocess. Each of the wires 73 may comprise a gold wire having a diameterof 20 μm, for example. In FIGS. 10A, and 10B, the wires 73 electricallyinterconnect surface electrodes of the semiconductor chips 72 and thelead terminals 62A, 63A extending from the island 61A of the adjacentmounting portions 64A.

The reverse or lower surfaces of the islands 61, 61A to which thesemiconductor chips 72 are fixed serve as external connection terminals100, and the leads 62A, 63A, 62, 63 electrically connected to thesemiconductor chips 72 by the wires 73 serve as other externalconnection electrodes 101, 102. Use of the reverse or lower surfaces ofthe islands 61, 61A as the external connection terminals 100 is suitablefor semiconductor devices with vertical current paths, in which thesemiconductor chips 72 are transistors, power MOSFETs, etc.

As shown in FIG. 10A, the electrically conductive paste 71 isselectively coated on the islands 61, 61A. If the electricallyconductive paste 71 were applied to the islands 62, 63 . . . , then theelectrically conductive paste 71 would clog a tip end of the capillaryof a bonding apparatus during the wire bonding process, causing abonding failure and a reduction in the productivity. When there is nodanger of such bonding failure, the electrically conductive paste 71 maybe coated entirely on the islands 61, 61A.

3rd Step (FIGS. 11A and 11B):

The entire assembly is encased by a molded resin body. Specifically, asshown in FIG. 11A, a resin layer 81 made of a thermosetting resin suchas an epoxy resin or the layer 81 made of a thermosetting resin such asan epoxy resin or the like is deposited and molded on the lead frame 60,encasing and protecting the mounting portions 64, 64a, the semiconductorchips 72, and the wires 73. The resin layer 81 does not individuallypackage devices A, B, C, but is deposited entirely over regions wherethe semiconductor chips 72 are mounted. The lead frame 60 which isencased by the molded resin layer 81 is shown in FIG. 11B.

The resin layer 81 is deposited and molded as follows: A framework (notshown) having a height of several mm is disposed around the lead frame60, and the space or cavity surrounded by the framework is filled with athermosetting resin such as an epoxy resin or the like. Then, thethermosetting resin is heated to a temperature ranging from about 150°C. to 200° C. According to an alternative transfer molding process, thelead frame 60 is placed in an injection molding cavity, which is thenfilled with a thermosetting resin such as an epoxy resin or the like.

4th Step (FIGS. 12A and 12B):

Slits 91 are defined in the reverse side of the lead frame 60.Specifically, the reverse side of the lead frame 60 is cut by a blade ofa dicing apparatus to form the slits 91. Each of the slits 91 has adepth which is greater than at least the thickness of the bottom plate67. One or more slits 91 are defined near each of the constrictedcentral regions of the lead terminals 62, 63, 62A, 63A.

5th Step (FIG. 13A):

As shown in FIG. 13A, the reverse side of the lead frame 60 ismechanically or chemically scraped off to remove the bottom plate 67.Since the thickness of the bottom plate 67 is relatively small, it caneasily be removed when the reverse side of the lead frame 60 is scrapedoff as by buffing or the like. After the bottom plate 67 is removed, theislands 61, 61A and the lead terminals 62, 63, 62A, 63A are exposed onthe reverse side of the lead frame 60.

6th Step (FIG. 13B):

Thereafter, as shown in FIG. 13B, plated layers 82 such as of asoldering material are deposited on the islands 61, 61A and the leadterminals 62, 63, 62A, 63A and the surfaces of the slits 91 which areexposed on the reverse side of the lead frame 60. The plated layers 82are deposited by an electroplating process with the lead frame 60 usedas an electrode. Since the slits 91 do not extend fully across the leadterminals 62, 63, 62A, 63A, the islands 61, 61A are electricallyconnected to the lead terminals 62, 63, 62A, 63A, and the mountingportions 64, 64A are electrically connected by the joint bars 65, 65A.Since all the exposed metal surfaces are electrically connectedtogether, the plated layer 82 can be deposited in one plating operation.

7th Step (FIG. 14):

The resin layer 82 is severed into the devices A, B, C. Specifically, aregion (indicated by arrows 83 in FIG. 14 or a dot-and-dash line 83 inFIG. 10A) which includes the island 61 with the semiconductor chip 72fixed thereto and the lead terminals 62A, 63A electrically connected tothe semiconductor chip 72 is cut off from the resin layer 82, therebyproducing the semiconductor device shown in FIGS. 7A-7C and 8A, 8B. Thesemiconductor device is cut off by a dicing apparatus. The resin layer81 and the lead frame 60 are simultaneously severed by the dicing bladeof the dicing apparatus. Specifically, a blue sheet, e.g., “UV sheet”manufactured by Lintech Co., is applied to the reverse side of the leadframe 60, and the resin layer 81 and the lead frame 60 aresimultaneously severed by the dicing blade which cuts into the assemblyuntil it reaches the surface of the blue sheet. In the slits 91, theplated layers 82 remain attached to the surfaces of the slits 91. Theremaining plated layers 82 will be used when the semiconductor device ismounted on a printed-circuit board. The cut ends of the lead terminals62, 63 serve as the projecting teeth 61 a (see FIG. 7B), and the cutends of the joint bars 65 serve as the projecting teeth 61 b. These cutends of the lead terminals 62, 63 and the joint bars 65 lie flush withand are exposed on cut side surfaces of the resin layer 81.

The semiconductor device thus fabricated by the above manufacturingprocess offers the following advantages:

Since the plated layers 82 are disposed on the external connectionterminals 100, 101, 102 of the semiconductor device, when thesemiconductor device is soldered to a packaging board, the appliedsolder easily rises up to the upper ends of the plated layers 82, whichwere positioned on the inner surfaces of the slits 91, providing anincreased solder bonding strength for protection against a deteriorationdue to stresses such as thermal stresses.

The terminal ends of the external connection terminals 100, 101, 102 aretapered at the opposite ends of the semiconductor device, as shown inFIG. 8A. Consequently, the external connection terminals 100, 101, 102are effectively prevented from being dislodged from the correspondingsides of the resin layer 81.

The inventor conducted an experiment in which a transistor chip having achip size of 0.40 mm×0.40 mm was placed on an island 61, and asemiconductor device (see FIG. 7A) having a package size of 1.0 mm×0.7mm was manufactured according to the process described above. Anexternal connection terminal 100 produced from the island 61 had a sizeof 0.6 mm×0.6 mm, and each of external connection terminals 101, 102produced from the lead terminals 62, 63 had a size of 0.25 mm×0.15 mm.The sizes of the external connection terminals 100, 101, 102 and thesize of the semiconductor device itself may be set to arbitrary valuesdepending on the size of the semiconductor chip.

A comparison of the effective area percentage of the semiconductordevice manufactured according to the above process, and the effectivearea percentage of the conventional semiconductor device shown in FIG. 3will be described below.

The conventional semiconductor device had a chip size of 0.40 mm×0.40mm. When the semiconductor chip of the conventional semiconductor devicewas connected to metal lead terminals by wires and encased by a moldedresin body, the semiconductor device had an overall size of 1.6 mm×1.6mm. The semiconductor device had an area of 2.56 mm², and thesemiconductor chip had an area of 0.16 mm². The mount area in which theconventional semiconductor device was mounted was 2.56 mm² as it wasessentially the same as the area of the semiconductor device, and hencethe effective area percentage of the conventional semiconductor devicewas about 6.25%.

While the semiconductor device according to the present invention has achip size of 0.40 mm×0.40 mm, as described above, since no metal leadterminals project from the package, the semiconductor device may have asize of 1.0 mm×0.7 mm, and hence an area of 0.7 mm². Consequently, theeffective area percentage of the semiconductor device is 22.85%, whichis about 3.6 times greater than the effective area percentage of theconventional semiconductor device. Accordingly, the mount area in whichthe semiconductor device according to the present invention is mountedon a packaging board contains a smaller dead space, and hence thepackaging board may be reduced in size.

Since a number of semiconductor devices are packaged together on thepackaging board, any amount of material waste is much smaller than itwould be if semiconductor devices were packaged individually, resultingin a reduction in the cost of materials used.

Furthermore, inasmuch as the outer contour of the semiconductor deviceis defined by the dicing blade, the outer contour of the resin layer 81may be defined highly accurately with respect to the pattern of the leadframe 60 by forming positioning marks on the outer strips 66 of the leadframe 60 and dicing the assembly with the dicing blade in alignment withthe positioning marks. Specifically, whereas the lead frame and the moldcavity according to the transfer molding process can be positionedrelatively to each other with an accuracy limit of ±50 μm, the accuracylimit that can be achieved when the outer contour of the resin layer 81is defined by the dicing blade is reduced to about ±10 μm. The reducedaccuracy limit allows the area of the island 60 to be increased, therebyincreasing the area of the semiconductor chip 72 that can be mounted.

In the above embodiment, the lead frame 60 is of such a structure as toproduce three-terminal semiconductor devices. FIG. 15 shows a lead frameused in a process of manufacturing a semiconductor device according toanother embodiment of the present invention. In FIG. 15, the lead framehas a plurality of mounting portions 64 (64A) each having an island 61(61A) and three lead terminals 62, 63, 68 (62A, 63A, 68A) extendingtherefrom. The lead frame shown in FIG. 15 serves to producefour-terminal semiconductor devices.

In the illustrated embodiments, a single semiconductor chip is mountedon each island. However, a plurality of transistors may be mounted on anisland, or transistors and other devices such as vertical power MOSFETsor the like may be combined and mounted on islands. For suchapplications, lead frames having many lead terminals as shown in FIG. 15are employed.

While a transistor is used as the semiconductor chip 72 in theillustrated embodiments, a vertical device or a horizontal device withrelatively small heat dissipation, such as a power MOSFET, an IGBT, HBT,etc., may be used as the semiconductor chip 72. Furthermore, the presentinvention is also applicable to an integrated circuit such as a BIP- orMOS-type integrated circuit if the number of lead terminals isincreased.

Although certain preferred embodiments of the present invention havebeen shown and described in detail, it should be understood that variouschanges and modifications may be made therein without departing from thescope of the appended claims.

We claim:
 1. A method of manufacturing a semiconductor device,comprising: providing a lead frame including an array of mountingportions connected by joint bars, each of the mounting portions havingan island for mounting a semiconductor chip thereon and having aplurality of lead terminals extending from the island, wherein the leadterminals comprise external connection terminals for forming anelectrical connection to another semiconductor chip mounted on anadjacent island along the array of mounting portions; mounting asemiconductor chip on a first surface of the island; electricallyconnecting the semiconductor chip to the lead terminals extending froman adjacent island along the array; forming a resin layer so as to coverthe semiconductor chip, the first surface of the island, and firstsurfaces of the lead terminals, wherein a second surface of the islandopposite the first surface of the island and second surfaces of the leadterminals opposite the first surfaces of the lead terminals are free ofthe resin layer so as to be exposed; and separating the lead frame so asto form a package including a region surrounding the island and the leadterminals electrically connected to the semiconductor chip mounted onthe island.
 2. The method of claim 1, wherein said providing of the leadframe comprises providing a lead frame having a bottom plate lower thanthe island and the lead terminals, and having a surface contiguous tothe second surface of the island and contiguous to the second surfacesof the lead terminals; and further comprising removing the bottom plateafter said forming of the resin layer.
 3. The method of claim 2, furthercomprising half-cutting the lead frame after said forming of the resinlayer so as to form slits in and across the lead terminals from oppositesurfaces of the lead terminals.
 4. The method of claim 3, furthercomprising forming a plated layer on the second surface of the island,the second surfaces of the lead terminals and inner surfaces of theslits after said removing of the bottom plate.
 5. The method of claim 1,further comprising half-cutting the lead frame after said forming of theresin layer so as to form slits in and across the lead terminals fromopposite surfaces of the lead terminals.
 6. A method of manufacturing asemiconductor device, comprising: providing a lead frame having an arrayof mounting portions on a first surface of the lead frame and having acommon back plate on a second surface of the lead frame, wherein thefirst surface is opposite the second surface, each of the mountingportions having an island for mounting a semiconductor chip thereon andhaving a plurality of lead terminals extending from the island, whereinthe lead terminals comprise external connection terminals for forming anelectrical connection to another semiconductor chip mounted on anadjacent island along the array by wiring; mounting a semiconductor chipon a first surface of the island of each of the mounting portions;electrically connecting the semiconductor chip by wiring thesemiconductor chip to the lead terminals extending from an adjacentisland along the array; forming a resin layer so as to cover thesemiconductor chip, the first surface of the island, and first surfacesof the lead terminals; removing the back plate from the second surfaceof the lead frame; and separating the lead frame so as to form a packageincluding a region surrounding the island and the lead terminalselectrically connected to the semiconductor chip mounted on the island.7. The method of claim 6, wherein said providing of the lead framecomprises forming the lead frame from a thin metal sheet having auniform thickness and a first surface, said forming comprising selectiveetching so as to form the array of mounting portions on the common backplate by half-etching from the first surface of the metal sheet.
 8. Themethod of claim 6, wherein said providing of the lead frame comprisesforming the lead frame from a first metal sheet and a second metal sheetbonded together, wherein the first metal sheet includes an array ofmounting portions and the second metal sheet comprises a back platehaving a uniform thickness.